| Specification |
Customized: ODM/OEM;
Power Supply: 10-30VDC;
UV Intensity Range: 0~15 MW/Cm2;
Accuracy: ±10% Fs (@365nm, 60%Rh, 25ºC);
Resolution: 0.01 MW/Cm2;
Wavelength Range: 290-390 Nm;
Working Temperature: -25ºC~+60ºC;
|
Type: Reflective Panels Type Photoelectric Sensor;
Output Signal Type: Relay Output;
Production Process: Normal Wirewound;
Material: ABS+PC;
Feature: SemiConductor;
IP Rating: IP67;
Customized: Customized;
Action Mode: Light on/Dark on;
Stable and Over-Length Sensing Range: Anti-Interference;
Customization: Customization;
Detecting Object: Transparent, Translucent, Opaque Objects;
Light Source Wavelength: 650nm;
Detect Distance: 0.1~1.5m;
Light Source Type: Infrared;
Sensitivity: The Detection Distance Is Adjusted by Potentiomete;
Light: Infrared LED (Modulated Light);
Supply Voltage: 12~240V DC/AC;
Detection Distance: 60m;
|
Type: Reflective Panels Type Photoelectric Sensor;
Output Signal Type: Relay Output;
Production Process: Normal Wirewound;
Material: ABS+PC;
Feature: SemiConductor;
IP Rating: IP67;
Customized: Customized;
Action Mode: Light on/Dark on;
Stable and Over-Length Sensing Range: Anti-Interference;
Customization: Customization;
Detecting Object: Transparent, Translucent, Opaque Objects;
Light Source Wavelength: 650nm;
Detect Distance: 0.1~1.5m;
Light Source Type: Infrared;
Sensitivity: The Detection Distance Is Adjusted by Potentiomete;
Light: Infrared LED (Modulated Light);
Supply Voltage: 12~240V DC/AC;
Detection Distance: 60m;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
